Accession Number : AD0758267

Title :   Photoemission from Amorphous Silicon.

Descriptive Note : Final rept.,

Corporate Author : YALE UNIV NEW HAVEN CONN DEPT OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Fisher,Traugott E. ; Erbudak,Mehmet

Report Date : FEB 1973

Pagination or Media Count : 11

Abstract : Amorphous films were prepared by vapor quenching in ultra-high vacuum. n- and p-type silicon crystals were used as substrates and vapor source. The measurements (performed on clean and cesium covered surfaces) included photoelectric yield, energy distributions of photoelectrons, surface photovoltage, secondary emission with emphasis on elastic reflections, plasmon excitations, and Auger spectra. Information about densities of states, optical transitions, and position of Fermi level was obtained by direct comparison of photoelectric emission from the amorphous film, a silicon crystal, and a metal measured simultaneously. The results were found to depend on the mode of preparation and annealing of disordered films. (Author Modified Abstract)

Descriptors :   (*SILICON, PHOTOELECTRIC EFFECT), SEMICONDUCTING FILMS, BAND THEORY OF SOLIDS, ELECTRON DIFFRACTION

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE