Accession Number : AD0759003

Title :   Electrical Polarization and Resistance Measurements in Silicon Under Shock Wave Compression,

Corporate Author : NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s) : Forbes,J. W. ; Jones,H. D. ; Coleburn,N. L.

Report Date : 28 FEB 1973

Pagination or Media Count : 33

Abstract : The electrical behavior of p-type silicon in the (111) orientation was studied under shock stresses from 8 kbar to 160 kbar. Positive electrical signals were induced in the crystals during passage of elastic shock waves. Maximum signal amplitude was detected below the Hugoniot elastic limit (55 kbar). Resistance vs stress measurements were made when the polarization signal was zero, i.e., no elastic waves were in the crystals. The resistance becomes very small near the elastic limit indicating that a metallic state may have been reached. At a 133 kbar stress level the resistance is significantly higher than at the elastic limit indicating that a phase transition has probably occurred. Contrary to the work of Gust and Royce, the work shows transitions only at the elastic limit and at 133 kbar. (Author)

Descriptors :   (*SEMICONDUCTORS, HIGH PRESSURE), (*SILICON, ELECTRICAL PROPERTIES), BAND THEORY OF SOLIDS, SHOCK WAVES, COMPRESSIVE PROPERTIES, POLARIZATION, CORRELATION TECHNIQUES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE