Accession Number : AD0759542

Title :   Advanced Concepts of Microwave Generation and Control in Solids.

Descriptive Note : Quarterly interim rept. no. 9, 1 Oct-31 Dec 72,

Corporate Author : CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Dalman,G. C. ; Eastman,L. F. ; Lee,C. A. ; Frey,J. ; Chilton,R. H.

Report Date : MAR 1973

Pagination or Media Count : 102

Abstract : MICROWAVE AMPLIFIERS, HARMONIC GENERATORS, AVALANCHE DIODES, SILICON, ION BOMBARDMENT, INDIUM COMPOUNDS, PHOSPHIDES, EPITAXIAL GROWTH, GALLIUM ARSENIDES, TRANSISTORS, IONIZATION, INTEGRATED CIRCUITSLSA DIODES, SCHOTTKY BARRIER DEVICES, SEMICONDUCTOR DIODES, GUNN EFFECT, GUNN DIODES, INDIUM PHOSPHIDES, IMPATT DIODES, ION IMPLANTATION, AVALANCHE DIODESThe report deals with the progress made during the ninth quarterly period of a solid state microwave oscillator and amplifier research and development program. The first section deals with the development of a PCM Gunn oscillator and the growth and evaluation of InP materials for LSA oscillators. Reviewed in the second section are high power TRAPATT diode structures, research on GaAs Schottky barrier avalanche diodes, research on high frequency TRAPATT oscillators, research on BARITT diodes, microwave transistor studies, and amplifier studies. The final section of the report deals with the progress made on ion implantation and diffusion, on vacuum epitaxial growth in silicon, on ionization rates in GaAs,and on a microwave monolithic integrated circuit study. (Author Modified Abstract)

Descriptors :   (*MICROWAVE OSCILLATORS, *SEMICONDUCTOR DIODES), MICROWAVE AMPLIFIERS, HARMONIC GENERATORS, AVALANCHE DIODES, SILICON, ION BOMBARDMENT, INDIUM COMPOUNDS, PHOSPHIDES, EPITAXIAL GROWTH, GALLIUM ARSENIDES, TRANSISTORS, IONIZATION, INTEGRATED CIRCUITS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE