Accession Number : AD0759833

Title :   Microwave Solid-State Device and Circuit Studies.

Descriptive Note : Technical rept. 1 Jun-1 Dec 72,

Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s) : Haddad,G. I.

Report Date : MAR 1973

Pagination or Media Count : 138

Abstract : F30602-71-C-0099AF-5573557303RADCTR-73-60See also Quarterly progress rept. no. 7, AD-749 500.(*semiconductor devices, *microwave equipment), (*integrated circuits, microwave equipment), avalanche diodes, microwave amplifiers, microwave oscillators, field effect transistors, silicon, gallium arsenides, manufacturinggunn diodes, impatt diodes, avalanche diodesThis is the eighth and ninth quarterly report on subject contract whose objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification, and control. Current tasks under this program are: Power combining schemes for solid-state devices, Modulation properties of Gunn-effect devices, Avalanche-diode amplifiers, Operating characteristics of IMPATT diodes, High-efficiency avalanche diodes, Properties of TRAPATT diodes, Field-effect transistors, and Solid-state device fabrication. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, *MICROWAVE EQUIPMENT), (*INTEGRATED CIRCUITS, MICROWAVE EQUIPMENT), AVALANCHE DIODES, MICROWAVE AMPLIFIERS, MICROWAVE OSCILLATORS, FIELD EFFECT TRANSISTORS, SILICON, GALLIUM ARSENIDES, MANUFACTURING

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE