Accession Number : AD0760350

Title :   An Experimental Study of Ultrahigh Fluence Oxygen Ion Implantation in Silicon.

Descriptive Note : Technical rept.,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s) : Fite,C. B. ; Grannemann,W. W.

Report Date : MAY 1973

Pagination or Media Count : 77

Abstract : An investigation was made to determine the feasibility of using ultrahigh fluences of implanted oxygen ions to create a usable oxide layer on silicon for device applications. This investigation included structural studies of observable surface defects which serve to illustrate the large amounts of stress induced in the implanted silicon. Measurements of the surface profile which manifest the effects of surface sputtering and lattice expansion were made. In addition, etch studies are reported in which implanted samples were etched in successive steps to determine how the structure of the implanted layer varied as a function of depth from the surface. (Modified author abstract)

Descriptors :   (*SILICON, ION BOMBARDMENT), (*SEMICONDUCTOR DEVICES, MANUFACTURING), (*INTEGRATED CIRCUITS, SILICON DIOXIDE), OXYGEN, DAMAGE, RADIATION EFFECTS, ANNEALING, SPUTTERING, SURFACE PROPERTIES, FEASIBILITY STUDIES

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE