Accession Number : AD0761213

Title :   Faraday Rotation and Attenuation in InSb in the 10.6 Micron Wavelength Region,

Descriptive Note : Final rept. 15 May-15 Nov 72,

Corporate Author : CASE WESTERN RESERVE UNIV CLEVELAND OHIO DIV OF ELECTRICAL ENGINEERING AND APPLIED PHYSICS

Personal Author(s) : Boord,Warren T. ; Pao,Yoh-Han

Report Date : 01 JUN 1973

Pagination or Media Count : 31

Abstract : The investigation examined the dependence of free carrier Faraday Rotation on dopant nature and concentration and on crystal orientation. The extent of rotation varies linearly with free carrier concentration. The wavelength dependence of absorption and Faraday rotation in the > 10.6 microns wavelength region was measured. In addition to the effect of the 'tail' of the interband effect and the free carrier effects, there were secondary structural details which could not be identified with any other plausible mechanism except that of deep donor levels due to donors at interstitial points. Wafers which were further lapped to reduce wafer thickness and were subsequently polished showed secondary structure of this nature to a greater degree than otherwise.

Descriptors :   (*INDIUM ANTIMONIDES, MAGNETOOPTICS), (*GAS LASERS, INFRARED OPTICAL MATERIALS), (*INFRARED OPTICAL MATERIALS, SEMICONDUCTOR DEVICES), INFRARED LASERS, IMPURITIES, BAND THEORY OF SOLIDS, ABSORPTION SPECTRA

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE