Accession Number : AD0761473

Title :   Feasibility Study of Pb(1-x)Sn(x)Te Charge Coupled Devices for Infrared Imaging Applications.

Descriptive Note : Master's thesis,

Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF

Personal Author(s) : Doshier,Alan Jeffrey

Report Date : MAR 1973

Pagination or Media Count : 85

Abstract : The purpose of this research was to examine the feasibility of narrow-gap semiconductor charged coupled devices for infrared imaging applications. The semiconductors considered are PbTe for a three to five micron imager and Pb(0.76)Sn(0.24)Te for an eight to 12 micron imager, both operated at a temperature of 85K. Theoretical calculations of signal current and storage time are made based on the metal-insulator-semiconductor theory developed for silicon MIS devices. Experimental studies of Pb(1-x)Sn(x)Te MIS were made which demonstrated that accumulation, depletion, and inversion layers can be controlled by gate voltage, following the general behavior of silicon MIS devices. A PbTe charged coupled device (CCD) infrated imager seems feasible. Feasibility of Pb(0.76)Sn(0.24)Te CCD's will require significant improvements in material and fabrication technology to increase storage time and reduce dark current. (Modified author abstract)

Descriptors :   (*SEMICONDUCTOR DEVICES, *INFRARED DETECTORS), LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, ELECTRICAL PROPERTIES, MANUFACTURING, FEASIBILITY STUDIES, THESES, COMPUTER PROGRAMS

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE