Accession Number : AD0761510

Title :   Study of PbTe, PbSnTe, PbSe, PbSnSe, and Ge Metal Insulator Semiconductor (MIS) Structures.

Descriptive Note : Master's thesis,

Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF

Personal Author(s) : Kost,Lawrence Michael

Report Date : MAR 1973

Pagination or Media Count : 173

Abstract : A thorough understanding and a well developed fabrication procedure of MIS structures are the prerequisite for charged coupled device applications. The object of this thesis is to study the narrow gap semiconductor MIS and investigate its feasibility for IR-charge coupled images applications. Two MIS studies were made. First, MIS of five lead-tin semiconductors were fabricated using E-gun evaporated 100-450A thick Al2O3 or SiO2 layers as insulators. Second, MIS of 0.05ohm-cm p-type and 40ohm-cm n-type Ge were also studied. In addition, effects of electron bombardment simulating the space environment around Jupiter on a n-channel depletion MOSFET were studied. (Modified author abstract)

Descriptors :   (*SEMICONDUCTOR DEVICES, ELECTRICAL PROPERTIES), (*INFRARED DETECTORS, FEASIBILITY STUDIES), LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, SELENIDES, GERMANIUM, MANUFACTURING, SEMICONDUCTING FILMS, FIELD EFFECT TRANSISTORS, DAMAGE, RADIATION EFFECTS, ELECTRON IRRADIATION, SPACE ENVIRONMENTS, COMPUTER PROGRAMS, THESES

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE