Accession Number : AD0761630

Title :   Low Pressure Vapor Growth of Diamond.

Descriptive Note : Final technical rept. 25 Jun 69-24 Jun 72,

Corporate Author : CASE WESTERN RESERVE UNIV CLEVELAND OHIO CHEMICAL ENGINEERING DIV

Personal Author(s) : Angus,John C. ; Gardner,Nelson C.

Report Date : 16 MAR 1973

Pagination or Media Count : 53

Abstract : Several laboratories have reported the epitaxial growth of diamond on diamond from the vapor at subatmospheric pressures. At these conditions diamond is thermodynamically metastable with respect to graphite. Two principal means of obtaining metastable diamond growth are reported: (1) the direct deposition of carbon from hydrocarbon vapors, usually methane and (2) the metal catalyzed vapor-liquid-solid (V-L-S) technique using molten transition metals as catalysts. The growth of boron doped P-type semiconducting diamond from the vapor was successfully demonstrated. The results provided further confirmation of metastable diamond growth and also substantiate the role of boron as the electrically active impurity center in semiconducting diamond. The boron also performs a catalytic function during the growth process. (Modified author abstract)

Descriptors :   (*DIAMONDS, *CRYSTAL GROWTH), METHANE, HYDROGEN, MATHEMATICAL MODELS, VAPOR PLATING, DEPOSITION, SEMICONDUCTING FILMS, DIBORANES, REACTION KINETICS, DOPING

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE