Accession Number : AD0762344

Title :   Lead-Tin-Chalcogenide Detector Substrate Development.

Descriptive Note : Final rept. 16 Jun 71-31 Jan 73,

Corporate Author : XEROX ELECTRO-OPTICAL SYSTEMS PASADENA CALIF

Personal Author(s) : Zoutendyk,J. A.

Report Date : MAY 1973

Pagination or Media Count : 62

Abstract : The objective of this program was the development of technology necessary to provide high quality, single crystalline, lead-tin-telluride (PbSnTe) materials grown by vapor-phase epitaxy for ultimate use in the fabrication of infrared detectors and detector arrays. Work was performed in the following two major areas: (1) growth of large PbSnTe ingots by closed-tube epitaxy, and (2) growth of PbSnTe layers by open-tube epitaxy. (Author)

Descriptors :   (*INFRARED DETECTORS, MANUFACTURING), (*SEMICONDUCTORS, EPITAXIAL GROWTH), LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, PHOTODIODES, SINGLE CRYSTALS, VAPOR PLATING

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE