Accession Number : AD0762344
Title : Lead-Tin-Chalcogenide Detector Substrate Development.
Descriptive Note : Final rept. 16 Jun 71-31 Jan 73,
Corporate Author : XEROX ELECTRO-OPTICAL SYSTEMS PASADENA CALIF
Personal Author(s) : Zoutendyk,J. A.
Report Date : MAY 1973
Pagination or Media Count : 62
Abstract : The objective of this program was the development of technology necessary to provide high quality, single crystalline, lead-tin-telluride (PbSnTe) materials grown by vapor-phase epitaxy for ultimate use in the fabrication of infrared detectors and detector arrays. Work was performed in the following two major areas: (1) growth of large PbSnTe ingots by closed-tube epitaxy, and (2) growth of PbSnTe layers by open-tube epitaxy. (Author)
Descriptors : (*INFRARED DETECTORS, MANUFACTURING), (*SEMICONDUCTORS, EPITAXIAL GROWTH), LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, PHOTODIODES, SINGLE CRYSTALS, VAPOR PLATING
Subject Categories : Electrical and Electronic Equipment
Infrared Detection and Detectors
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE