Accession Number : AD0763413

Title :   Evaluation of Gallium Nitride for Active Microwave Devices.

Descriptive Note : Annual technical progress rept. 1 Mar 72-31 Mar 73,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s) : Gershenzon,Murray ; Wing,H. S.

Report Date : MAY 1973

Pagination or Media Count : 10

Abstract : The study of the heterepitaxial growth of single crystal GaN was being undertaken both by open tube chemical vapor despotion and by organometal vapor transport growth. GaN thin film, deposited on (1,-1,0,2) sapphire, were typically transparent in color with the corresponding values of 0.15 mm thick (x 2 x 1 cm), 4 x 10 to the 18th power/cc carrier density and 90 sq. cm./v-sec mobility. Preliminary study for the drift velocity; and for good ohmic contacts and Schottky barrier materials were also made by I-V technique and photoresponse method. (Author)

Descriptors :   (*SEMICONDUCTORS, *EPITAXIAL GROWTH), (*GALLIUM COMPOUNDS, ELECTRICAL PROPERTIES), SEMICONDUCTING FILMS, NITRIDES, SINGLE CRYSTALS, MICROWAVE EQUIPMENT

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE