Accession Number : AD0763761
Title : Growth and Characterization of GaAs and Mixed III-V Semiconductor Compounds.
Descriptive Note : Rept. for Jul 69-Jun 73,
Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
Personal Author(s) : Yip,Vincent F. S.
Report Date : JUN 1973
Pagination or Media Count : 233
Abstract : Gallium arsenide crystals were grown 1 cm in diameter by the gradient freeze technique and by the travelling heater method (THM) using a gallium zone. Optimal conditions for THM with a 1 cm long resistance heater were determined to be a heater temperature of 900C, a lowering rate of 1.5 mm/day, a 6 to 10 mm long zone, a 1 cm long seed and a feed ingot over 2 mm long. Experimental results agreed well with a classical constitutional supercooling analysis. Preliminary experiments of THM growth of Ga(x)In(1-x)Sb and Ga(x)Al(1-x)As were also performed. Classical constitutional supercooling theory was extended to multicomponent systems. (Author)
Descriptors : (*GALLIUM ARSENIDES, *CRYSTAL GROWTH), (*SEMICONDUCTORS, CRYSTAL GROWTH), INDIUM ANTIMONIDES, ALUMINUM COMPOUNDS, SINGLE CRYSTALS, DOPING, DEFECTS(MATERIALS), ELECTRICAL PROPERTIES, HALL EFFECT, MASS SPECTROSCOPY, LUMINESCENCE
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE