Accession Number : AD0763840
Title : Physics of Semiconductor Luminescence and High-Temperature Semiconductors.
Descriptive Note : Final rept. 1 Jun 68-14 Mar 73,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Rediker,Robert H. ; Fonstad,Clifton G.
Report Date : 02 JUL 1973
Pagination or Media Count : 23
Abstract : A new luminescence modulation effect was observed in Si and Ge and a new negative resistance phenomenon discovered in Ge. The intrinsic energy band levels in (Al,Ga)As were studied as a function of alloy composition, and the modulation of (Al,Ga)As luminescence by surface fields investigated. Higher quality crystals of the wide band-gap semiconductor stannic oxide than previously available were grown and extensive studies were undertaken of SnO2's electrical and optical properties, crystal growth, and device technology. (Author)
Descriptors : (*SEMICONDUCTORS, LUMINESCENCE), SILICON, GERMANIUM, GALLIUM ARSENIDES, ALUMINUM COMPOUNDS, PHOTODIODES, LASERS, TIN COMPOUNDS, OXIDES, HIGH TEMPERATURE, PHOTOCONDUCTIVITY, BAND THEORY OF SOLIDS, TUNNELING(ELECTRONICS), CRYSTAL GROWTH, ELECTRICAL PROPERTIES, OPTICAL PROPERTIES, SECONDARY EMISSION
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE