Accession Number : AD0763903
Title : Thermal Response of Power Transistors.
Descriptive Note : Technical rept.,
Corporate Author : ARMY MISSILE COMMAND REDSTONE ARSENAL ALA GROUND EQUIPMENT AND MATERIALS DIRECTORATE
Personal Author(s) : Thurman,Dallas L.
Report Date : 01 JUN 1973
Pagination or Media Count : 116
Abstract : The report is a study of the thermal effects on planar epitaxial silicon power transistors. The primary objectives considered are power dissipation and junction temperature of the device. A nonlinear digital program model is developed with temperature being the dynamic factor. Theoretical techniques are developed to describe I sub(CBO), forward, and saturation region of operation, with respect to the temperature variable. Throughout the study, temperature has significant effects upon the operation of the silicon power transistor. (Author)
Descriptors : (*TRANSISTORS, THERMAL STABILITY), SILICON, MATHEMATICAL MODELS, COMPUTER PROGRAMS, LEAKAGE(ELECTRICAL), POWER
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE