Accession Number : AD0763929

Title :   Reliability of High Field Semiconductor Devices.

Descriptive Note : Interim rept. 1 Apr-30 Sep 72,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : Heaton,John L. ; Ramachandran,T. B.

Report Date : JUL 1973

Pagination or Media Count : 95

Abstract : 07-72-C-0101DA-1-S-662705-A-0561-S-662705-A-05601ECOM0101-72-I(*semiconductor diodes, reliability(electronics)), microwave oscillators, gallium arsenides, silicon, transients, failure(electronics), test methods, test equipmentgunn diodes, impatt diodes, transient radiation effects(electronics)The report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn, and IMPATT diodes and silicon IMPATT diodes. Data is presented concerning the burn-out distribution in time and parameter change of 553 Gunn diodes placed on high temperature dc burn-in. The results of Gunn diode switching transient reliability tests and long term dc burn-in data are also reported. Temperature measurement data on operating gallium arsenide Gunn and IMPATT diodes obtained using an infrared radiometer are presented. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, RELIABILITY(ELECTRONICS)), MICROWAVE OSCILLATORS, GALLIUM ARSENIDES, SILICON, TRANSIENTS, FAILURE(ELECTRONICS), TEST METHODS, TEST EQUIPMENT

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE