Accession Number : AD0764708
Title : Photoresponse Analysis of Linear Microcircuit Instability Resulting from Charge Induced Surface Inversion.
Descriptive Note : Technical rept.,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y
Personal Author(s) : Haberer,John R.
Report Date : MAY 1973
Pagination or Media Count : 54
Abstract : WOULD ALLOW THE DEVICE TO COMPLETELY RECOVER IN MOST CASES. The cycle could be repeated with no apparent change in behavior. Several specialized techniques were applied to analyze these devices in an attempt to identify the specific detailed failure mechanisms. A photoscanning technique developed by the author was applied to identify the direct cause of failure as inversion of the input stage collector load resistor isolation area. This inversion created a conductive channel from the p-type diffused resistors across the n-isolation to the p-substrate. The particular devices found to be prone to this failure mechanism were those fabricated on (100) oriented silicon. Although it was possible to invert devices fabricated on (111) oriented silicon, in no case did this lead to device failure under normal operating conditions. After having established that inversion was indeed causing device failure, additional analysis was done to establish the exact characteristics of the inversion. (Modified author abstract)
Descriptors : (*INTEGRATED CIRCUITS, FAILURE(ELECTRONICS)), (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), ELECTRICAL PROPERTIES, STABILITY, SILICON, AMPLIFIERS, TEST METHODS, PHOTOSENSITIVITY
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE