Accession Number : AD0766740
Title : Electron Beam Semiconductor Devices.
Descriptive Note : Final rept. 1 Mar 72-21 Feb 73,
Corporate Author : MACHLETT LABS INC STAMFORD CONN
Personal Author(s) : Braun,M. ; Garewal,K.
Report Date : JUL 1973
Pagination or Media Count : 21
Abstract : N BEAMSDuring the course of the contract, five EBS amplifiers, designated as EE-155, and 15 mounted EBS diodes, designated as EE-154 A and B, were developed, fabricated and delivered to the USAECOM. Diode area was 10 sq. cm and 20 sq. mm, active width of N region 25 micrometers, with resistivity of 20 ohm-cm. The electron beam of the amplifiers is generated and modulated by a cathode grid structure, with a focus electrode for beam diameter control. Best back bias voltage of the 20 diodes delivered exceeds 400 volts, with an average of 300 volts. First tests at USAECOM were done on a 20 sq. mm diode tube at 235V back bias voltage. Peak current into 3.8 ohm load was 46A, a peak power of 8 KW with a pulse risetime of 1.5 ns. Risetime, when corrected for the input pulse, is approximately 1 ns. (Author)
Descriptors : (*MICROWAVE AMPLIFIERS, *PULSE AMPLIFIERS), (*SEMICONDUCTOR DIODES, *RADIOFREQUENCY AMPLIFIERS), ELECTRON TUBE TARGETS, RELIABILITY(ELECTRONICS), MANUFACTURING, ELECTRON BEAMS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE