Accession Number : AD0766769

Title :   Microwave Solid-State Device and Circuit Studies.

Descriptive Note : Quarterly progress rept. no. 10, 1 Dec 72-1 Mar 73,

Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s) : Haddad,G. I. ; Lomax,R. J. ; Tang,D.

Report Date : JUN 1973

Pagination or Media Count : 128

Abstract : ATE Device and Circuit Studies.Quarterly progress rept. no. 10, 1 Dec 72-1 Mar 73,10Haddad,G. I. ;Lomax,R. J. ;Tang,D. ;F30602-71-C-0099AF-5573557303RADCTR-73-157See also Quarterly progress rept. 8/9, AD-759 833.(*semiconductor devices, *microwave equipment), (*integrated circuits, microwave equipment), avalanche diodes, microwave amplifiers, microwave oscillators, field effect transistors, silicon, gallium arsenides, manufacturinggunn diodes, impatt diodes, avalanche diodesThe tenth quarterly report investigates theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification, and control. Current tasks under this program are: Modulation properties of Gunn-effect devices, nonlinear operating characteristics of IMPATT diodes, high-efficiency avalanche diodes, properties of TRAPATT diodes, field-effect transistors, CW power capability of IMPATT devices, solid-state device fabrication.

Descriptors :   (*SEMICONDUCTOR DEVICES, *MICROWAVE EQUIPMENT), (*INTEGRATED CIRCUITS, MICROWAVE EQUIPMENT), AVALANCHE DIODES, MICROWAVE AMPLIFIERS, MICROWAVE OSCILLATORS, FIELD EFFECT TRANSISTORS, SILICON, GALLIUM ARSENIDES, MANUFACTURING

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE