Accession Number : AD0766853

Title :   Raman Scattering in Narrow-Gap Semiconductors.

Descriptive Note : Doctoral thesis,

Corporate Author : PENNSYLVANIA UNIV PHILADELPHIA DEPT OF PHYSICS

Personal Author(s) : Brillson,Leonard Jack

Report Date : 1972

Pagination or Media Count : 193

Abstract : The nature of the Raman scattering process is discussed, as well as the form of the Raman scattering cross-section and the way in which various excitations can contribute to the scattering. The lattice dynamics of the zero-gap semiconductor (semi-metal) graphite is investigated. A description of the Raman equipment and experimental procedure is also presented. Electric field-induced Raman scattering is introduced and a general background of the two important types of electric field-induced experiments is presented which focusses on paraelectric soft mode behavior and the effects of surface space charge regions. Surface electric field-induced Raman scattering in the cubic IV-VI compound semiconductors PbTe, PbS, PbSe, and SnTe is investigated.

Descriptors :   (*SEMICONDUCTORS, RAMAN SPECTROSCOPY), SCATTERING, PHONONS, QUANTUM THEORY, CRYSTAL LATTICES, BAND THEORY OF SOLIDS, THESES, GRAPHITE, LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, SELENIDES, SULFIDES, FERROELECTRICITY

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE