Accession Number : AD0767225

Title :   Advanced Concepts of Microwave Generation and Control in Solids.

Descriptive Note : Technical rept., 1 Jan-31 Mar 73,

Corporate Author : CORNELL UNIV ITHACA N Y

Personal Author(s) : Dalman,G. C. ; Eastman,L. F. ; Lee,C. A. ; Frey,F.

Report Date : JUL 1973

Pagination or Media Count : 110

Abstract : Control in Solids.Technical rept., 1 Jan-31 Mar 73,Dalman,G. C. ;Eastman,L. F. ;Lee,C. A. ;Frey,F. ;F30602-71-C-0110RADCTR-73-196(*microwave oscillators, *semiconductor diodes), microwave amplifiers, harmonic generators, avalanche diodes, silicon, l band, x band, field effect transistors, gallium arsenides, indium compounds, phosphides, ionization, doping, epitaxial growthlsa diodes, schottky barrier devices, semiconductor diodes, indium phosphides, ion implantation, avalanche diodesContents: Multi-Mesa TRAPATT fabrication, high frequency high efficiency avalanche oscillators, high frequency Pt-n-p+ diodes, BARITT devices, microwave field-effect transistors, amplifier properties, computer experiments on TRAPATT diodes, c.w. high performance TEO, growth and evaluation of InP for LSA oscillations, ion implantation and diffusion, ionization rates in GaAs, vacuum epitaxial growth in silicon, gallium arsenide microwave monolithic integrated circuit study.

Descriptors :   (*MICROWAVE OSCILLATORS, *SEMICONDUCTOR DIODES), MICROWAVE AMPLIFIERS, HARMONIC GENERATORS, AVALANCHE DIODES, SILICON, L BAND, X BAND, FIELD EFFECT TRANSISTORS, GALLIUM ARSENIDES, INDIUM COMPOUNDS, PHOSPHIDES, IONIZATION, DOPING, EPITAXIAL GROWTH

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE