Accession Number : AD0767338

Title :   Yellow Luminescent Diodes.

Descriptive Note : Final rept. 1 Jan 71-31 Dec 72,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Nuese,Charles J.

Report Date : JAN 1973

Pagination or Media Count : 94

Abstract : The authors review the vapor-phase growth technology used for the preparation of the epitaxial layers, and follow this by a section concerned with alloy homogeneity, one of the more important papameters for the preparation of high-quality in (1-x)Ga(x)P. The problems associated with lattice mismatch in epitaxial growth is discussed, the three types of epitaxy-substrate structures prepared are described. The p-n junctions prepared on GaAs substrates are described, and it is shown that very high quality light-emitting diodes can be obtained when an In(1-x)Ga(x)P alloy composition that has the same lattice constant as the GaAs substrate is used. The growth of In(1-x) Ga(x)P substrates is treated and the high-resistance problems that were consistently observed for such structures due to a variety of technological complications are described. The results obtained with the three different types of structures are compared, and the features and limitations of each are described. (Author)

Descriptors :   (*PHOTODIODES, MANUFACTURING), INDIUM COMPOUNDS, GALLIUM COMPOUNDS, PHOSPHIDES, EPITAXIAL GROWTH, ELECTROLUMINESCENCE, SEMICONDUCTOR DIODES, DOPING

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE