Accession Number : AD0767572

Title :   Reaction Kinetics of Pd and Ti-Al Films on Si,

Corporate Author : CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Bower,Robert W.

Report Date : MAY 1973

Pagination or Media Count : 125

Abstract : The growth of compound phases from thin film layers of Pd and Ti-Al deposited on Si is described in this work. The growth kinetics and composition of the compound phases were measured utilizing 2 MeV 4He backscattering. Crystalline structure and film texture effects of the compounds layers were measured by X-ray diffraction techniques. The Ti-Al metal system is used to make contact to Si in integrated circuit applications. Compound phases in this system can be directly related to severe erosion of metal -Si contact areas which result in failure of the integrated circuits. The rate kinetics are found to have practical application in predicting and controlling a failure mechanism in an integrated circuit metallization scheme. (Modified author abstract)

Descriptors :   (*PALLADIUM, FILMS), (*TITANIUM ALLOYS, FILMS), (*ALUMINUM ALLOYS, FILMS), SILICON, BACKSCATTERING, REACTION KINETICS, CRYSTAL GROWTH, X RAY DIFFRACTION, INTEGRATED CIRCUITS, PHASE STUDIES, SUBSTRATES, INTERMETALLIC COMPOUNDS, SILICIDES, PALLADIUM COMPOUNDS, CRYSTAL STRUCTURE, CHEMICAL REACTIONS

Subject Categories : Physical Chemistry
      Properties of Metals and Alloys

Distribution Statement : APPROVED FOR PUBLIC RELEASE