Accession Number : AD0768053

Title :   Studying Pressure of Saturated Vapors of Some Semiconductors by Means of Radioactive Isotopes,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Shakhtakhtinskii,M. G.

Report Date : 12 SEP 1973

Pagination or Media Count : 89

Abstract : The object was to study the pressure of saturated vapors in a number of semiconductor compounds and solutions and to clarify certain processes which occur during evaporation. The most exact determination of saturated vapor pressure is obtained by using radioactive isotopes. In order to achieve the goal (test) devices and a work technique are developed.

Descriptors :   (*SEMICONDUCTORS, *VAPOR PRESSURE), EVAPORATION, PHASE STUDIES, IMPURITIES, RADIOACTIVE ISOTOPES, EXPERIMENTAL DESIGN, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE