Accession Number : AD0768218

Title :   Interface Phenomena in Integrated Circuit Oxides.

Descriptive Note : Final rept. 30 Jun 70-1 Jan 73,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Viswanathan,Cadambanguidi R.

Report Date : JUL 1973

Pagination or Media Count : 45

Abstract : ON LIMITED MOBILE ION TRANSPORT MODEL WAS PROPOSED. By use of a ramp-voltage technique and C-V measurements after bias-heat stress, it was demonstrated that the number of mobile ions is given by a temperature dependent Boltzman distribution. The ramp-voltage technique is useful in determining total number of ions mobile at a given temperature but is not by itself sufficient to determine the transport properties. It was demonstrated that evaluation of oxide contamination by C-V curve shifts yields a lower than true value if the sample is not kept under positive bias and sweep bias applied only when the sweep voltage approaches closely the flat-band voltage. SiO2 layers were also fabricated by the pyrolitic decomposition of silane gas and the electrical properties as a function of annealing temperatures were studied. Electrical properties of films annealed at 1000C approach closely those of thermal oxides. Recommendations for further oxide studies are given. (Author)

Descriptors :   (*SILICON DIOXIDE, *IONIC CURRENT), (*INTEGRATED CIRCUITS, SILICON DIOXIDE), TUNNELING(ELECTRONICS), INTERFACES, SEMICONDUCTING FILMS, CAPACITORS, ANNEALING, ELECTRICAL PROPERTIES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE