Accession Number : AD0768751

Title :   Susceptibility of Semiconductor Devices to Thermal Second Breakdown,

Corporate Author : NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s) : Cohn,Norman S.

Report Date : 21 MAR 1973

Pagination or Media Count : 27

Abstract : A method for determining the susceptibility of semiconductor devices to damage from an electromagnetic pulse (EMP) due to induced thermal second breakdown is described. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given type. A mathematical explanation is presented, and other tentative applications are proposed. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, NONDESTRUCTIVE TESTING), (*SEMICONDUCTOR DIODES, FAILURE(ELECTRONICS)), DAMAGE, RADIATION EFFECTS, ELECTROMAGNETIC PULSES, VULNERABILITY, THERMAL RADIATION, ELECTRICAL PROPERTIES, TEST METHODS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE