Accession Number : AD0769857

Title :   Fabrication Procedure for Silicon Membrane X-Ray Lithography Masks.

Descriptive Note : Technical note,

Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s) : Cohen,Ronald A. ; Mountain,Robert W. ; Smith,Henry I. ; Lemma,Muriel A. ; Spears,David L.

Report Date : 20 SEP 1973

Pagination or Media Count : 14

Abstract : CH LEXINGTON LINCOLN LABFabrication Procedure for Silicon Membrane X-Ray Lithography Masks.Technical note,Cohen,Ronald A. ;Mountain,Robert W. ;Smith,Henry I. ;Lemma,Muriel A. ;Spears,David L. ;TN-1973-38F19628-73-C-0002DA-7-X-263304-D-215ESDTR-73-248(*X ray diffraction, *Masking), (*Wafers, X ray diffraction), Silicon, Membranes, Etching, Boron, FabricationA step-by-step procedure for the fabrication of silicon membrane x-ray lithography masks is described. The procedure involves the diffusion of boron into the polished face of an n-type <100> silicon wafer, the formation of gold absorber patterns on the boron diffused face, and the selective etching of the n-type silicon so as to produce thin membranes (2 to 5 microns thick) of silicon supporting the absorber patterns. (Author)

Descriptors :   (*X RAY DIFFRACTION, *MASKING), (*WAFERS, X RAY DIFFRACTION), SILICON, MEMBRANES, ETCHING, BORON, FABRICATION

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE