Accession Number : AD0769904

Title :   Electron Beam Semiconducting S-Band Amplifier.

Descriptive Note : Rept. for 1 Mar-14 Jun 73,

Corporate Author : WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s) : Roberts,Lester A.

Report Date : NOV 1973

Pagination or Media Count : 36

Abstract : S band, Electron irradiation, Reliability, Hybrid systems, Solid state electronicsElectron beam semiconductor amplifiers, DesignThe construction and testing of the life test tubes which was begun in the last reporting period was continued. Five tubes were processed with a total of ten diodes. Sheet beam dispenser cathodes were designed and ordered. A new diode failure mechanism appeared in the presence of the electron beam which does not seem to be related to previously solved problems. None of these devices were able to be plated on extended life test. Design procedures became available from other programs during the period for tuned resonant circuit amplifiers which relate physical design parameters to bandwidth and power output. Accurate S-band designs were then calculated which indicate achievable performance. Cold testing took place of a radial transmission line resonator suitable for use in a tuned amplifier at 3.2 GHz. (Modified author abstract)

Descriptors :   (*Microwave amplifiers, Semiconductor devices), (*Electron tube targets, Semiconductor diodes), S band, Electron irradiation, Reliability, Hybrid systems, Solid state electronics

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE