Accession Number : AD0770054

Title :   Comments on DC Conductivity in Amorphous Semiconductors,

Corporate Author : CALIFORNIA UNIV RIVERSIDE DEPT OF PHYSICS

Personal Author(s) : Pollak,M. ; Halperin,B. I.

Report Date : 1973

Pagination or Media Count : 11

Abstract : A recent paper argued that the electrical conductivity arising from thermal hopping between localized states obeys the law ln sigma is proportional to minus ((T sub zero)/T) to the 1/3 power, at low temperatures. That result is found to be based on several unjustified assumptions, however, and the correct temperature dependence is ln sigma is proportional to minus ((T sub zero)/T) to the 1/4 power, as originally proposed by Mott. (Author)

Descriptors :   (*Semiconductors, Electrical conductivity), Amorphous materials, Mathematical models, Direct current

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE