Accession Number : AD0770079

Title :   Charge Trapping Effects in Thin Films of Al2O3 and SiO2.

Descriptive Note : Technical rept.,

Corporate Author : PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB

Personal Author(s) : Harari,Eliyahou

Report Date : AUG 1973

Pagination or Media Count : 260

Abstract : Electron and hole traps in MIS devices with pyrohydrolytic Al2O3 gate insulator have been investigated, using the MIS device as an integral detector of the charge stored in the oxide. The same detection technique has been used to investigate ionizing radiation-induced charge trapping effects in thin films of SiO2 incorporated into MIS capacitor structures. (Modified author abstract)

Descriptors :   *Dielectric films, *Semiconducting films, *Thin films, *Silicon dioxide, *Radiation effects, Damage, Ionizing radiation, Defects(Materials), Aluminum compounds, Oxides, Band theory of solids, Radiation hardening, Electrical properties, Capacitors

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE