Accession Number : AD0770528

Title :   Reliability of High Field Semiconductor Devices.

Descriptive Note : Semi-annual rept. no. 2, 1 Apr 72-1 Apr 73,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : Ramachandran,T. B. ; Heaton,J. L.

Report Date : NOV 1973

Pagination or Media Count : 97

Abstract : D Semiconductor Devices.Semi-annual rept. no. 2, 1 Apr 72-1 Apr 73,2Ramachandran,T. B. ;Heaton,J. L. ;DAAB07-72-C-0101ECOM0101-72-2*Gunn diodes, *Semiconductor diodes, Reliability(Electronics), Gunn effect, Microwave oscillators, Gallium arsenides, Silicon, Transient radiation effects, FailureIMPATT diodesThe interim report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn and IMPATT diodes, and silicon IMPATT diodes. Data is presented concerning the burn-out distribuiton in time of Gunn diodes. Also, the changes in dc and RF parameters of 700 Gunn and 100 gallium arsenide IMPATT diodes resulting from 24 to 168 hours of dc high temperature burn-in are present. (Modified author abstract)

Descriptors :   *Gunn diodes, *Semiconductor diodes, Reliability(Electronics), Gunn effect, Microwave oscillators, Gallium arsenides, Silicon, Transient radiation effects, Failure

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE