Accession Number : AD0770655
Title : The Effects of Gamma Radiation on the Current Instabilities Caused by Recombination Centers in n-GaAs Crystals,
Corporate Author : MANITOBA UNIV WINNIPEG MATERIALS RESEARCH LAB
Personal Author(s) : Elsharkawi,A. R. ; Kao,K. C.
Report Date : 1972
Pagination or Media Count : 3
Abstract : An investigation was carried out to study the effects of gamma radiation on the current instabilities in oxygen-doped n-GaAs crystals. The crystal samples used for this investigation were n-type GaAs slices of (111) orientation containing 10 to the 11th power oxygen atoms/cc and having a resistivity of 7800 ohm-cm, supplied from Monsanto Company.
Descriptors : *Semiconductors, *Gallium arsenides, *Radiation effects, Gamma rays, Electric current, Voltage, Cobalt, Canada
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE