Accession Number : AD0770655

Title :   The Effects of Gamma Radiation on the Current Instabilities Caused by Recombination Centers in n-GaAs Crystals,

Corporate Author : MANITOBA UNIV WINNIPEG MATERIALS RESEARCH LAB

Personal Author(s) : Elsharkawi,A. R. ; Kao,K. C.

Report Date : 1972

Pagination or Media Count : 3

Abstract : An investigation was carried out to study the effects of gamma radiation on the current instabilities in oxygen-doped n-GaAs crystals. The crystal samples used for this investigation were n-type GaAs slices of (111) orientation containing 10 to the 11th power oxygen atoms/cc and having a resistivity of 7800 ohm-cm, supplied from Monsanto Company.

Descriptors :   *Semiconductors, *Gallium arsenides, *Radiation effects, Gamma rays, Electric current, Voltage, Cobalt, Canada

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE