Accession Number : AD0771015

Title :   Electrical, Optical and Mechanical Behavior of Photoconducting II-VI Compound Semiconductors.

Descriptive Note : Final rept. 15 Sep 71-31 Oct 73,

Corporate Author : COLORADO UNIV BOULDER DEPT OF MECHANICAL ENGINEERING

Personal Author(s) : Ahlquist,C. Norman

Report Date : 01 NOV 1973

Pagination or Media Count : 9

Abstract : The interrelationship of the electrical, optical and mechanical properties of II-VI compounds has been studied experimentally. Observed increases in flow stress during illumination with white light are shown to be the result of the interaction of charged dislocations with charged point defects. The introduction of charged dislocations during plastic flow leads to an increase and decrease in electrical conductivity in n- and p-type CdTe, respectively. These conductivity changes are consistent with the creation of an excess of dislocation donor states during deformation. Light is shown to decrease the resistance to crack propagation in CdTe. This change in crack extension resistance results from a decrease in plastic work accompanying fracture. (Author)

Descriptors :   *Semiconductors, *Cadmium tellurides, *Photoconductors, Photoconductivity, Dislocations, Point defects, Plastic flow, Crack propagation, Photoelectric effect

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE