Accession Number : AD0771545

Title :   Mobile Central Switches (An Electron-Lithography Application).

Descriptive Note : Final rept. 9 Jun 69-30 Jun 72,


Personal Author(s) : Malmberg,Paul R. ; O'Keeffe,Terrence W. ; Sopira,Michael M. ; Scala,Luciano C.

Report Date : SEP 1973

Pagination or Media Count : 300

Abstract : RON BEAM LITHOGRAPHY, *Random access computer storageMaximum density circuit fabrication techniques were applied to the fabrication of a 1024-bit random access memory based on a 2-transistor versatile memory/crosspoint switch cell of RADC design. Arranged as a 32 word by 32 bit matrix of cells on 20 x 24 micron centers, the memory chip design includes address decoding for selective enabling of three control busses per word to permit operation of the device as a random access memory, associative memory, crosspoint switch, or sample and hold switch. A two micron minimum geometry design rule was followed. Fourteen memory circuits and 4 test circuits were completed and the best units were mounted on ceramic carriers with 50-pin edge connectors. Static and dynamic tests of these devices showed operating transistors, decoders, and a memory word used for reset of data lines. Electron beam fabrication techniques were advanced during the program. (Modified author abstract)

Descriptors :   *Memory devices, *Logic circuits, *Fabrication, Lithography, Electron beams, Integrated circuits

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE