Accession Number : AD0771545
Title : Mobile Central Switches (An Electron-Lithography Application).
Descriptive Note : Final rept. 9 Jun 69-30 Jun 72,
Corporate Author : WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
Personal Author(s) : Malmberg,Paul R. ; O'Keeffe,Terrence W. ; Sopira,Michael M. ; Scala,Luciano C.
Report Date : SEP 1973
Pagination or Media Count : 300
Abstract : RON BEAM LITHOGRAPHY, *Random access computer storageMaximum density circuit fabrication techniques were applied to the fabrication of a 1024-bit random access memory based on a 2-transistor versatile memory/crosspoint switch cell of RADC design. Arranged as a 32 word by 32 bit matrix of cells on 20 x 24 micron centers, the memory chip design includes address decoding for selective enabling of three control busses per word to permit operation of the device as a random access memory, associative memory, crosspoint switch, or sample and hold switch. A two micron minimum geometry design rule was followed. Fourteen memory circuits and 4 test circuits were completed and the best units were mounted on ceramic carriers with 50-pin edge connectors. Static and dynamic tests of these devices showed operating transistors, decoders, and a memory word used for reset of data lines. Electron beam fabrication techniques were advanced during the program. (Modified author abstract)
Descriptors : *Memory devices, *Logic circuits, *Fabrication, Lithography, Electron beams, Integrated circuits
Subject Categories : Computer Hardware
Distribution Statement : APPROVED FOR PUBLIC RELEASE