Accession Number : AD0772014

Title :   Use of Photostimulated Luminescence for Studying the Characteristics of Radiation-Induced Electron Centers,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Krongauz,V. G. ; Parfianovich,I. A. ; Yarovoii,P. N. ; Rogalev,B. I.

Report Date : 18 DEC 1973

Pagination or Media Count : 9

Abstract : The kinetics of recombination processes in a solid body depends in great measure on the probability of repeated localizations (RL) of the charge carriers in pre-radiation and radiation induced microdefects. Repeated localizations can determine in a broad time range, buildup and luminescence attenuation rates. This is extremely important in an applied relationship. Existing methods for studying RL are not always effective. The article proposes a method which permits determination of RL probability and calculation of the amount of thermal ionization energy epsilon and frequency factor (P sub 0) for centers in which secondary electron captures occur.

Descriptors :   *Band theory of solids, *Photoluminescence, Ionization, Translations, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE