Accession Number : AD0772014
Title : Use of Photostimulated Luminescence for Studying the Characteristics of Radiation-Induced Electron Centers,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Krongauz,V. G. ; Parfianovich,I. A. ; Yarovoii,P. N. ; Rogalev,B. I.
Report Date : 18 DEC 1973
Pagination or Media Count : 9
Abstract : The kinetics of recombination processes in a solid body depends in great measure on the probability of repeated localizations (RL) of the charge carriers in pre-radiation and radiation induced microdefects. Repeated localizations can determine in a broad time range, buildup and luminescence attenuation rates. This is extremely important in an applied relationship. Existing methods for studying RL are not always effective. The article proposes a method which permits determination of RL probability and calculation of the amount of thermal ionization energy epsilon and frequency factor (P sub 0) for centers in which secondary electron captures occur.
Descriptors : *Band theory of solids, *Photoluminescence, Ionization, Translations, USSR
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE