Accession Number : AD0772425

Title :   Electrical Properties of the Diffusion P-N Junctures of P-Type Gallium Arsenide,

Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s) : Mashnin,S. V. ; Khludkov,S. S.

Report Date : 26 NOV 1973

Pagination or Media Count : 6

Abstract : The paper discusses results of research on the influence of cooling on the volt-ampere characteristic of p-n junctures obtained by the diffusion of sulphur and tin. The relationship of the spark-over voltage to the gradient of concentration of the mixture in the field of the space charge and of the critical voltage of the electric field in a p-n juncture from the width of the field of the space charge is also discussed.

Descriptors :   *Semiconductor junctions, *Gallium arsenides, Electrical properties, Translations, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE