Accession Number : AD0772425
Title : Electrical Properties of the Diffusion P-N Junctures of P-Type Gallium Arsenide,
Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA
Personal Author(s) : Mashnin,S. V. ; Khludkov,S. S.
Report Date : 26 NOV 1973
Pagination or Media Count : 6
Abstract : The paper discusses results of research on the influence of cooling on the volt-ampere characteristic of p-n junctures obtained by the diffusion of sulphur and tin. The relationship of the spark-over voltage to the gradient of concentration of the mixture in the field of the space charge and of the critical voltage of the electric field in a p-n juncture from the width of the field of the space charge is also discussed.
Descriptors : *Semiconductor junctions, *Gallium arsenides, Electrical properties, Translations, USSR
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE