Accession Number : AD0772529
Title : Development of a Wideband Low-Noise L-Band Transistor Amplifier.
Descriptive Note : Final rept.,
Corporate Author : NAVAL RESEARCH LAB WASHINGTON D C
Personal Author(s) : Meixner,Raymond P.
Report Date : DEC 1973
Pagination or Media Count : 42
Abstract : At microwave frequencies, the recently developed small signal arsenic-diffused-emitter transistors offer high gain, reasonable compression levels, and low noise figure at low-bias levels. These characteristics make them attractive for use in low-noise preamplifiers in RF front ends of a multiport phased-array radar receiver. This report describes the development of a two-stage common-emitter amplifier, operating between 800 and 1400 MHz, using conventional microstrip techniques having a spot noise figure less than 4.00 dB, at a gain of 26.5 dB. Computer-aided design routines were used to obtain final designs from transistor S-parameters. Noise figure and stability criteria are discussed. (Author)
Descriptors : *Microwave amplifiers, *Transistor amplifiers, L band, Broadband, Preamplifiers, Radar, Radar receivers
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE