Accession Number : AD0772642
Title : Feasibility of Silicon Carbide High Frequency, High Power Devices.
Descriptive Note : Final rept. Oct 72-Jun 73,
Corporate Author : WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA ASTRONUCLEAR LAB
Personal Author(s) : Wu,Shu-Yau ; Campbell,Robert B. ; Berman,Herbert S.
Report Date : JUL 1973
Pagination or Media Count : 38
Abstract : Several material parameters of SiC were examined and figures of merit calculated to show the potential of SiC as a high frequency, high power device material. Schottky barrier diodes were prepared on n-type SiC by sputtering on a gold layer. The barrier voltage, measured by three techniques, was found to be 1.40 plus or minus 0.05 eV. An initial study was made on ion implanted layers (N2 into p-type SiC) but usuable diodes were not obtained. (Author)
Descriptors : *Silicon carbides, *Schottky barrier devices, Semiconductor diodes, High frequency, High power, Ion implantation, Ionization, Thermal conductivity, Band theory of solids, Electrical properties, Feasibility studies
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE