Accession Number : AD0772905

Title :   Conduction Changes in GUNN Devices under the Influence of 10.6 and 0.6328 micrometer Fluxes.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Glendinning,W. B. ; Fischer,K. H. ; Jacobs,H. ; Benanti,M.

Report Date : DEC 1973

Pagination or Media Count : 33

Abstract : -A-44003*Gunn diodes, *Semiconductor devices, *Gallium arsenides, *Photoconductivity, Optical detectors, Infrared detectors, Gunn effect, Photodetectors, Carbon dioxide lasers, Helium neon lasers, Radiation effectsThe room temperature response (conductance) of GaAs material in a GUNN device structure under the influence of 10.6 micrometer and 0.6328 micrometer irradiation was investigated. Both continuous wave and pulsed irradiations were used in making measurements on devices placed in dc and 60 Hz dynamic test circuits. Negative and positive conductance changes were determined from the CO2 and HeNe fluxes, respectively. The responsivity of the GUNN device under CO2 irradiation was calculated to be 0.023 A/W. Negative conductance change was attributed to thermal heating whereas the positive change was interpreted as resulting from carrier generation (photoconductive effect). (Author)

Descriptors :   *Gunn diodes, *Semiconductor devices, *Gallium arsenides, *Photoconductivity, Optical detectors, Infrared detectors, Gunn effect, Photodetectors, Carbon dioxide lasers, Helium neon lasers, Radiation effects

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE