Accession Number : AD0773272

Title :   Investigation of Transient Processes in Transistors during the Pulsed Action of Penetrating Radiation,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Mamedov,R. A. ; Vologdin,E. N. ; Markovich,M. I.

Report Date : 18 DEC 1973

Pagination or Media Count : 10

Abstract : Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.

Descriptors :   *Transistors, *Transient radiation effects, Electron irradiation, Ionization, Translations, USSR

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE