Accession Number : AD0773272
Title : Investigation of Transient Processes in Transistors during the Pulsed Action of Penetrating Radiation,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Mamedov,R. A. ; Vologdin,E. N. ; Markovich,M. I.
Report Date : 18 DEC 1973
Pagination or Media Count : 10
Abstract : Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.
Descriptors : *Transistors, *Transient radiation effects, Electron irradiation, Ionization, Translations, USSR
Subject Categories : Electrical and Electronic Equipment
Radioactiv, Radioactive Wastes & Fission Prod
Distribution Statement : APPROVED FOR PUBLIC RELEASE