Accession Number : AD0773296

Title :   V Groove M.O.S. Transistor Technology,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Holmes,F. E. ; Salama,C. A. T.

Report Date : 21 AUG 1973

Pagination or Media Count : 3

Abstract : An metal oxide semiconductor transistor structure in which the channel is defined by preferential etching of the silicon is described. The fabrication technology involves either a 3- or 4-mask process, and results in very-short-channel devices, using noncritical alignment tolerances. Experimental results obtained on the fabricated devices are presented, and possible uses of the technology are described. (Author)

Descriptors :   *Field effect transistors, *Transistors, *Integrated circuits, Metal oxide semiconductors, Fabrication, Silicon, Etching, Masking, Semiconductors, Canada

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE