Accession Number : AD0773301

Title :   Studies of Silicon Extrinsic Detectors,

Corporate Author : ILLINOIS UNIV URBANA SOLID STATE ELECTRONICS LAB

Personal Author(s) : Sah,C. T.

Report Date : 28 NOV 1973

Pagination or Media Count : 39

Abstract : Theoretical analyses of the effects of ion position correlation on the electron mobility in n-type silicon are compared with experiments. Steady-state and transient extrinsic photoconductivity are analyzed including the presence of recombination centers. Theoretical analyses are made of the photoionization cross-section of impurity for Coulomb and spherical square wells and compared with experimental data of shallow acceptors in silicon. (Author)

Descriptors :   *Infrared detectors, *Silicon, *Photoconductivity, Semiconductors, Semiconductor devices, Infrared communications, Receivers, Electron mobility, Band theory of solids, Ionization, Impurities

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE