Accession Number : AD0773425

Title :   Chemical Vapor Deposition of Titanium Dioxide Film in Microelectronics,

Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Hsuch,Y. W. ; Lin,H. C.

Report Date : OCT 1972

Pagination or Media Count : 5

Abstract : With high dielectric constant, titanium dioxide has been used for making a capacitor and field effect transistor in conjunction with silicon dioxide. High transconductance and low threshold voltage were observed.

Descriptors :   *Titanium oxides, *Thin films, *Vapor deposition, Microelectronics, Field effect transistors, Manufacturing

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE