Accession Number : AD0773425
Title : Chemical Vapor Deposition of Titanium Dioxide Film in Microelectronics,
Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Hsuch,Y. W. ; Lin,H. C.
Report Date : OCT 1972
Pagination or Media Count : 5
Abstract : With high dielectric constant, titanium dioxide has been used for making a capacitor and field effect transistor in conjunction with silicon dioxide. High transconductance and low threshold voltage were observed.
Descriptors : *Titanium oxides, *Thin films, *Vapor deposition, Microelectronics, Field effect transistors, Manufacturing
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE