Accession Number : AD0774285
Title : EBS Diode Arrays.
Descriptive Note : Final rept.,
Corporate Author : NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF
Personal Author(s) : Schuegraf,K. K.
Report Date : JAN 1974
Pagination or Media Count : 51
Abstract : S, Silicon, Fabrication, Specifications, Electrical properties, Gain, PassivityDesignThe objective of this study was to determine methods of fabricating an array of fifth silicon diodes for application in an electron beam semiconductor (EBS) device. Lateral dimensions of the diode array specified in the procurement specification were necessary requirements. The diode arrays were processed with poly silicon and aluminum as well as phosphorous glass passivating layers. An evaluation of the stability of the diode reverse characteristics under electron bombardment was made. Measurements of electron gain and pulse response were performed. Several 50 element diode arrays were fabricated, tested and evaluated. Recommendations for making electrical connections to the diode arrays were made. (Modified author abstract)
Descriptors : *Electron tube targets, *Semiconductor diodes, Silicon, Fabrication, Specifications, Electrical properties, Gain, Passivity
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE