Accession Number : AD0774298

Title :   Fundamental Investigations of Amorphous Semiconductors and Transition Metal Oxides.

Descriptive Note : Final rept. 1 Jan 66-30 Sep 73,

Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s) : Spicer,William E.

Report Date : 15 JAN 1974

Pagination or Media Count : 6

Abstract : The density of states for amorphous Ge and Si has been obtained for the top 5 eV of the valence band and bottom 10 eV of the conduction band. These results have been confirmed by other measurements. This work has produced experimental evidence that the band edges in properly prepared amorphous Ge and Si are much sharper and the density of states in the band gap can be much lower than previously believed. Theoretical arguments have appeared which support these results. Criteria were developed for obtaining sharp band edges and minimizing the density of states in the bandgap. The result that band edges can be sharp in amorphous materials and that the density of states in the bandgap region can be reasonably low have great importance for the design and fabrication of amorphous devices. Experiments have been carried out with large amounts of As impurity in Ge. The results from ultraviolet photoemission studies on SrTiO3, TiO2 and VO2 are summarized in terms of the electronic structure of these materials. VO2 has been studied in both the metallic and semiconducting forms. Results have been obtained from a UV polarizer especially designed and constructed on this project. (Modified author abstract)

Descriptors :   *Amorphous materials, *Semiconductors, *Transition metals, *Oxides, *Band theory of solids, Germanium, Silicon, Strontium compounds, Titanates, Titanium oxides, Vanadium compounds, Dioxides

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE