Accession Number : AD0774319

Title :   Photoluminescence and Annealing of the Implanted Nitrogen Isoelectronic Trap in GaAs(1-x)P(x),

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Wolford,Donald James , Jr

Report Date : DEC 1973

Pagination or Media Count : 115

Abstract : The goal of the investigation was to establish through photoluminescence the presence of the optically-active N isoelectronic trap in GaAs(1-x)Px following 14N(+) implantations. Study of annealing and damage associated non-radiative centers as a function of implantation fluence, substrate temperature, and material composition were explored. Photoluminescence data confirming optically active N trap incorporation is presented for two GaAs(1-x)Px compositions (x = 0.50, x = 0.37) on either side of the direct-indirect crossover.

Descriptors :   *GALLIUM ARSENIDES, *GALLIUM PHOSPHIDES, *ION IMPLANTATION, NITROGEN, SEMICONDUCTORS, BAND THEORY OF SOLIDS, PHOTOLUMINESCENCE, ANNEALING, THESES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE