Accession Number : AD0774401
Title : Surface Temperature Measurements for Ion Bombarded Si and GaAs at 1.0 to 2.0 MeV.
Descriptive Note : Physical sciences research papers,
Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Personal Author(s) : Lowe,L. F. ; Kennedy,J. K. ; Davies,D. E. ; Deane,M. L. ; Eyges,L. J.
Report Date : 29 OCT 1973
Pagination or Media Count : 11
Abstract : The use of ion implantation both as a research tool and as an electronic device fabrication technique has increased significantly in recent years. One parameter of interest is the temperature produced by the bombarding ions in the implanted volume during the irradiation. An infrared detector was used to measure these temperatures for ion beams of N+, N2+, O+, O2+, C+, CO+, and H+ at energies from 1 - 2.0 MeV and currents up to 12 micro amperes/sq cm. (Author)
Descriptors : *Silicon, *Gallium arsenides, *Semiconductors, *Radiation effects, *Ion implantation, Ion beams, Oxygen, Nitrogen, Carbon, Carbon monoxide, Hydrogen, Surface temperature
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE