Accession Number : AD0774439

Title :   Metal-Semiconductor Junctions on Cleaved Cadmium Sulfide.

Descriptive Note : Doctoral thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s) : Ehrenfried,Charles E.

Report Date : DEC 1973

Pagination or Media Count : 248

Abstract : Diffused metal-semiconductor junctions were measured and compared to a theoretical model to obtain a better understanding of the barrier mechanisms after having first formed controlled Schottky barriers. Rectifying metal contacts of gold, silver and copper were deposited in situ on vacuum cleaved surfaces of conducting single crystal cadmium sulfide. The barrier parameters of the metal-semiconductor contact were determined from an analysis of differential capacitance and current-voltage experimental measurements. A theoretical model for a diffused metal-semiconductor barrier which included a semi-insulating layer and a linearly graded region was used to derive the capacitance-voltage relations. A parametric computer study of the model was done and the experimental data for several heat-treated barriers agreed favorably using this model. (Modified author abstract)

Descriptors :   *Semiconductor junctions, *Cadmium sulfides, Work functions, Band theory of solids, Tunneling(Electronics), Electrical conductivity, Schottky barrier devices, Heat treatment, Electric current, Voltage, Capacitance, Copper, Gold, Silver, Mathematical models, Theses

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE