Accession Number : AD0774462

Title :   Microwave Field Effect Transistor Development.

Descriptive Note : Final rept. 18 Jun 72-31 May 73,


Personal Author(s) : Driver,Michael C. ; Geisler,Martin J. ; Barrett,Donovan L. ; Kim,He B.

Report Date : NOV 1973

Pagination or Media Count : 71

Abstract : HE DEVELOPMENT OF A GALLIUM ARSENIDE Schottky barrier gate field effect transistor to deliver power at microwave frequencies. The program achieved 1.2 watts of saturated power at 3.0 GHz with six small (500 micrometers wide) devices wired in parallel on a single chip carrier. The small signal gain of individual devices at this frequency was as high as 10 dB with cut off frequencies of 10 GHz. A 5 dB gain at 3 GHz with 800 milliwatts of output power was achieved with 6 devices in parallel. Measurements were made of intermodulation products showing -23 dB third order IMP at small signal levels which is a typical result for devices that have not been optimized for low harmonic distortion. A mercury probe was developed for the rapid evaluation of expitaxial material for FET fabrication. (Modified author abstract)

Descriptors :   *Field effect transistors, Microwave equipment, Gallium arsenides, Gates(Circuits), Schottky barrier devices, Junction transistors

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE