Accession Number : AD0774676

Title :   Behavior of Injection Locked IMPATT and Free Running TRAPATT Oscillators under Transient Ionizing Radiation.

Descriptive Note : Final rept. 1 Dec 71-30 Jun 73,


Personal Author(s) : Chandhi,Sorab K. ; Borrego,Jose M. ; Gutman,Ronald J. ; Geipel,Henry J.

Report Date : 01 NOV 1973

Pagination or Media Count : 38

Abstract : X-band injection locked IMPATT oscillators were exposed to 100-nanosecond pulses of 10 MeV electrons at dose rates between 3 x 10 to the 8th power and 3 x 10 to the 9th power rads/sec. During the radiation pulse, the RF power of the oscillator was found to be independent of the locking signal while the RF frequency shift depended upon the power of the locking signal. Original performance was regained within a few RF cycles following the radiation pulse. S-band TRAPATT diode pulsed oscillators were exposed to 100 nanoseconds pulses of 10 MeV electrons at dose rates between 2 x 10 to the 7th power and 4 x 10 to the 9th power rad/sec in both evacuated and air-filled cavities. The RF power is unaffected below a critical dose rate, which is typically between 8 x 10 to the 7th power and 2 x 10 to the 8th power rads/sec. Above this critical dose rate the RF power is almost quenched entirely during the radiation pulse, but recovers to the original level within 50 nanoseconds afterwards for all dose rates used. Rapid recovery of original RF power levels occurred when the radiation pulse occurred at the initiation of the 300 nanosecond RF TRAPATT pulse, in the middle of the TRAPATT pulse, or during the decay of the TRAPATT pulse. (Author)

Descriptors :   *Microwave oscillators, *Transient radiation effects, *Avalanche diodes, *IMPATT diodes, X band, S band, Electron irradiation

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE