Accession Number : AD0775319
Title : Monte Carlo Calculations of Dose Distribution in SEM Irradiated Semiconductor Structures.
Descriptive Note : Final rept. 18 May-18 Oct 73,
Corporate Author : SCIENCE APPLICATIONS INC ARLINGTON VA
Personal Author(s) : Chadsey,William L.
Report Date : 18 OCT 1973
Pagination or Media Count : 27
Abstract : Monte Carlo calculations were performed to determine the two-dimensional dose distribution in a metal/oxide/silicon substrate structure irradiated by the electron beam from a scanning electron microscope (SEM). The objective was to investigate energy deposition in transistors neighboring an MOS capacitor test pattern irradiated by a SEM electron beam. The principal conclusion is that no damage to neighboring transistors is predicted - the dose in the oxide layer 2 microns from the boundary of the test pattern is four orders of magnitude smaller than the soe dose in the test pattern oxide for a 20 keV beam. Plots and tables of depth dose distribution, radial dose distribution, dose distribution near a rectangular target pattern, charge deposition distribution, and radial distribution of reflected charge are presented. (Author)
Descriptors : *Metal oxide semiconductors, *Semiconductor devices, *Electron microscopy, *Radiation effects, Electron irradiation, Silicon, Capacitors, Transistors, Dose rate, Electron transport, Distribution, Monte Carlo method
Subject Categories : Electrical and Electronic Equipment
Radioactiv, Radioactive Wastes & Fission Prod
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE